Speaker
Description
Van der Waals heterostructures offer unprecedented control in materials science by enabling atomic-scale stacking of metals, insulators, superconductors, and magnetic materials—optionally with tailored twist angles. The electronic properties of these systems are highly sensitive to interlayer tunnel coupling, which can be tuned by modifying the layer spacing using hydrostatic pressure. In this talk, I will present transport measurements performed with a unique pressure-cell platform capable of probing wire-bonded devices up to 2.5 GPa. I will discuss how pressure enhances proximity-induced spin–orbit coupling in TMDC–graphene heterostructures, modifies the band structure in twisted graphene, alters colossal magnetoresistance in the antiferromagnet CrSBr, and affects topological phases in 2D crystals such as MnBi₂Te₄. These results highlight pressure as a powerful tool for engineering electronic states in van der Waals materials.
